WMS05P06T1 WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -18A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -18A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 293+ | 0.24 EUR |
| 350+ | 0.2 EUR |
| 368+ | 0.19 EUR |
| 435+ | 0.16 EUR |
| 463+ | 0.15 EUR |
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Technische Details WMS05P06T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -18A; 3.1W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -4.5A, Pulsed drain current: -18A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 90mΩ, Mounting: SMD, Gate charge: 15nC, Kind of package: reel; tape, Kind of channel: enhancement.