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WMS06N10TS WAYON



Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.8A; Idm: 23A; 3.1W; SOP8
Mounting: SMD
Gate charge: 37.9nC
Polarisation: unipolar
Drain current: 5.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 45mΩ
Pulsed drain current: 23A
Power dissipation: 3.1W
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Technische Details WMS06N10TS WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 5.8A; Idm: 23A; 3.1W; SOP8, Mounting: SMD, Gate charge: 37.9nC, Polarisation: unipolar, Drain current: 5.8A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOP8, On-state resistance: 45mΩ, Pulsed drain current: 23A, Power dissipation: 3.1W.