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WMS06N10TS

WMS06N10TS WAYON


Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.8A; Idm: 23A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.8A
Pulsed drain current: 23A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 37.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
132+0.64 EUR
257+0.33 EUR
311+0.27 EUR
355+0.24 EUR
500+0.23 EUR
Mindestbestellmenge: 132 Stücke
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Technische Details WMS06N10TS WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 5.8A; Idm: 23A; 3.1W; SOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 5.8A, Pulsed drain current: 23A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 45mΩ, Mounting: SMD, Gate charge: 37.9nC, Kind of package: reel; tape, Kind of channel: enhancement.