WMS11P02TS WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -44A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -44A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details WMS11P02TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -44A; 3W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -11A, Pulsed drain current: -44A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±12V, On-state resistance: 13.5mΩ, Mounting: SMD, Gate charge: 19nC, Kind of package: reel; tape, Kind of channel: enhancement.