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WMS175N10HG4 WAYON



Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 36A; 3.1W; SOP8
Pulsed drain current: 36A
Power dissipation: 3.1W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 18mΩ
Mounting: SMD
auf Bestellung 457 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
125+0.68 EUR
214+0.39 EUR
261+0.32 EUR
296+0.29 EUR
Mindestbestellmenge: 125 Stücke
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Technische Details WMS175N10HG4 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 36A; 3.1W; SOP8, Pulsed drain current: 36A, Power dissipation: 3.1W, Gate charge: 17nC, Polarisation: unipolar, Drain current: 9A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOP8, On-state resistance: 18mΩ, Mounting: SMD.