WMZ13N65EM WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DFN8x8
On-state resistance: 390mΩ
Pulsed drain current: 35A
Power dissipation: 85W
Gate charge: 20.3nC
Polarisation: unipolar
Technology: WMOS™ EM
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 650V
Produktrezensionen
Produktbewertung abgeben
Technische Details WMZ13N65EM WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W, Mounting: SMD, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Kind of package: reel; tape, Case: DFN8x8, On-state resistance: 390mΩ, Pulsed drain current: 35A, Power dissipation: 85W, Gate charge: 20.3nC, Polarisation: unipolar, Technology: WMOS™ EM, Drain current: 6.5A, Kind of channel: enhancement, Drain-source voltage: 650V.
