WND10P08XQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 800V 10A TO220F
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220F
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
| Anzahl | Preis |
|---|---|
| 13+ | 1.43 EUR |
| 50+ | 1.14 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.62 EUR |
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Technische Details WND10P08XQ WeEn Semiconductors
Description: DIODE GEN PURP 800V 10A TO220F, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Active, Operating Temperature - Junction: 150°C, Supplier Device Package: TO-220F, Current - Average Rectified (Io): 10A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Isolated Tab, Packaging: Tube, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A.
Weitere Produktangebote WND10P08XQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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WND10P08XQ | Hersteller : WeEn Semiconductors |
Small Signal Switching Diodes Standard reverse recovery pwr diode |
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