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WNM2021-EV

WNM2021-EV EVVO

WNM2021-EV.pdf?rlkey=iqgid06hxfpzg8uf8lze6h470&st=64xjm5h5&dl=0 Hersteller: EVVO
Description: N-CHANNEL 20 V (D-S) MOSFET SOT-
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2A, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.098 EUR
Mindestbestellmenge: 3000
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Technische Details WNM2021-EV EVVO

Description: N-CHANNEL 20 V (D-S) MOSFET SOT-, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 68mOhm @ 2A, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V.

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WNM2021-EV WNM2021-EV Hersteller : EVVO WNM2021-EV.pdf?rlkey=iqgid06hxfpzg8uf8lze6h470&st=64xjm5h5&dl=0 Description: N-CHANNEL 20 V (D-S) MOSFET SOT-
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2A, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH