WNSC06650T6J WeEn Semiconductors
Hersteller: WeEn Semiconductors
SiC Schottky Diodes WNSC06650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.37 EUR |
| 10+ | 4.25 EUR |
| 100+ | 3.33 EUR |
| 500+ | 2.78 EUR |
| 1000+ | 2.45 EUR |
| 3000+ | 2.37 EUR |
| 6000+ | 2.34 EUR |
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Technische Details WNSC06650T6J WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A 5DFN, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: 5-DFN (8x8), Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 190pF @ 1V, 1MHz.
Weitere Produktangebote WNSC06650T6J
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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WNSC06650T6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A 5DFN Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: 5-DFN (8x8) Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 190pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| WNSC06650T6J |
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Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A 5DFN
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: 5-DFN (8x8)
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Cut Tape (CT)
Description: DIODE SIL CARBIDE 650V 6A 5DFN
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: 5-DFN (8x8)
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)