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WNSC06650T6J

WNSC06650T6J WeEn Semiconductors

WNSC06650T.pdf
Hersteller: WeEn Semiconductors
SiC Schottky Diodes WNSC06650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD
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Lieferzeit 10-14 Tag (e)
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1+4.51 EUR
10+3.57 EUR
100+2.8 EUR
500+2.34 EUR
1000+2.06 EUR
3000+1.99 EUR
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Technische Details WNSC06650T6J WeEn Semiconductors

Description: DIODE SIL CARBIDE 650V 6A 5DFN, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: 5-DFN (8x8), Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 190pF @ 1V, 1MHz.

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WNSC06650T6J WNSC06650T6J Hersteller : WeEn Semiconductors WNSC06650T.pdf Description: DIODE SIL CARBIDE 650V 6A 5DFN
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: 5-DFN (8x8)
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
WNSC06650T6J WNSC06650T6J Hersteller : WeEn Semiconductors WNSC06650T.pdf Description: DIODE SIL CARBIDE 650V 6A 5DFN
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: 5-DFN (8x8)
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
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Im Einkaufswagen  Stück im Wert von  UAH