WNSC08650T6J WeEn Semiconductors
Hersteller: WeEn Semiconductors
Schottky Diodes & Rectifiers WNSC08650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD
| Anzahl | Preis |
|---|---|
| 1+ | 5.37 EUR |
| 10+ | 4.82 EUR |
| 100+ | 3.94 EUR |
| 500+ | 3.36 EUR |
| 1000+ | 2.83 EUR |
| 3000+ | 2.71 EUR |
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Technische Details WNSC08650T6J WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 267pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: 5-DFN (8x8), Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote WNSC08650T6J
| Foto | Bezeichnung | Hersteller | Beschreibung |
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WNSC08650T6J | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 267pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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