WNSC101200Q WeEn Semiconductors
Hersteller: WeEn SemiconductorsSchottky Diodes & Rectifiers WNSC101200/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.79 EUR |
| 10+ | 10.6 EUR |
| 100+ | 9.47 EUR |
| 1000+ | 9.19 EUR |
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Technische Details WNSC101200Q WeEn Semiconductors
Description: DIODE SIL CARB 1.2KV 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 510pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 110 µA @ 1200 V.
Weitere Produktangebote WNSC101200Q
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WNSC101200Q | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARB 1.2KV 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 510pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 110 µA @ 1200 V |
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