WNSC10650T6J WeEn Semiconductors
Hersteller: WeEn Semiconductors
Schottky Diodes & Rectifiers WNSC10650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD
| Anzahl | Preis |
|---|---|
| 1+ | 6.09 EUR |
| 10+ | 5.46 EUR |
| 100+ | 4.47 EUR |
| 500+ | 3.8 EUR |
| 1000+ | 3.2 EUR |
| 3000+ | 3.08 EUR |
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Technische Details WNSC10650T6J WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A 5DFN, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Last Time Buy, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: 5-DFN (8x8), Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 328pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote WNSC10650T6J
| Foto | Bezeichnung | Hersteller | Beschreibung |
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WNSC10650T6J | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 10A 5DFN Current - Reverse Leakage @ Vr: 60 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Last Time Buy Operating Temperature - Junction: 175°C (Max) Supplier Device Package: 5-DFN (8x8) Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 328pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Packaging: Tape & Reel (TR) |
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