WNSC10650T6J WeEn Semiconductors
Hersteller: WeEn SemiconductorsSchottky Diodes & Rectifiers WNSC10650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD
auf Bestellung 2926 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 9 EUR |
| 10+ | 8.06 EUR |
| 100+ | 6.6 EUR |
| 500+ | 5.62 EUR |
| 1000+ | 4.73 EUR |
| 3000+ | 4.55 EUR |
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Technische Details WNSC10650T6J WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 328pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: 5-DFN (8x8), Operating Temperature - Junction: 175°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote WNSC10650T6J
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| WNSC10650T6J | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 50A Anzahl je Verpackung: 3000 Stücke |
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WNSC10650T6J | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 10A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 328pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
Produkt ist nicht verfügbar |
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WNSC10650T6J | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 10A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 328pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
Produkt ist nicht verfügbar |
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| WNSC10650T6J | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8N; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DFN8x8N Kind of package: reel; tape Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |