WNSC10650WQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Schottky Diodes & Rectifiers WNSC10650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.14 EUR |
| 10+ | 5.51 EUR |
| 100+ | 4.5 EUR |
| 600+ | 3.83 EUR |
| 1200+ | 3.22 EUR |
| 5400+ | 3.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WNSC10650WQ WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO247-2, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Last Time Buy, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 328pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote WNSC10650WQ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
WNSC10650WQ | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 10A TO247-2 Current - Reverse Leakage @ Vr: 60 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Last Time Buy Operating Temperature - Junction: 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 328pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WNSC10650WQ |
|
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO247-2
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Last Time Buy
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE SIL CARB 650V 10A TO247-2
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Last Time Buy
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH