WNSC2D04650Q WeEn Semiconductors
Hersteller: WeEn Semiconductors
SiC Schottky Diodes WNSC2D04650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK
| Anzahl | Preis |
|---|---|
| 2+ | 2.68 EUR |
| 10+ | 1.71 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.81 EUR |
| 2000+ | 0.76 EUR |
| 5000+ | 0.68 EUR |
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Technische Details WNSC2D04650Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 4A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 125pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
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WNSC2D04650Q | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARB 650V 4A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 125pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
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