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WNSC2D04650Q

WNSC2D04650Q WeEn Semiconductors


WNSC2D04650-2902711.pdf Hersteller: WeEn Semiconductors
Schottky Diodes & Rectifiers WNSC2D04650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK
auf Bestellung 2876 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.24 EUR
10+ 1.83 EUR
100+ 1.42 EUR
500+ 1.21 EUR
1000+ 0.98 EUR
2000+ 0.92 EUR
5000+ 0.88 EUR
Mindestbestellmenge: 2
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Technische Details WNSC2D04650Q WeEn Semiconductors

Description: DIODE SIL CARB 650V 4A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 125pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.

Weitere Produktangebote WNSC2D04650Q nach Preis ab 0.93 EUR bis 2.25 EUR

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WNSC2D04650Q WNSC2D04650Q Hersteller : WeEn Semiconductors WNSC2D04650.pdf Description: DIODE SIL CARB 650V 4A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.25 EUR
50+ 1.81 EUR
100+ 1.43 EUR
500+ 1.21 EUR
1000+ 0.99 EUR
2000+ 0.93 EUR
Mindestbestellmenge: 8
WNSC2D04650Q Hersteller : WeEn Semiconductors WNSC2D04650Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 24A
Max. forward voltage: 2.2V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WNSC2D04650Q Hersteller : WeEn Semiconductors WNSC2D04650Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 24A
Max. forward voltage: 2.2V
Produkt ist nicht verfügbar