WNSC2D04650TJ WeEn Semiconductors
Hersteller: WeEn SemiconductorsDescription: DIODE SIL CARBIDE 650V 4A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1 EUR |
| 6000+ | 0.95 EUR |
| 9000+ | 0.91 EUR |
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Technische Details WNSC2D04650TJ WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 125pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: 5-DFN (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote WNSC2D04650TJ nach Preis ab 1.06 EUR bis 2.43 EUR
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WNSC2D04650TJ | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 4A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 125pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
auf Bestellung 10530 Stücke: Lieferzeit 10-14 Tag (e) |
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| WNSC2D04650TJ | Hersteller : Ween |
Diode Schottky SiC 650V 4A 5-Pin DFN T/R |
Produkt ist nicht verfügbar |
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| WNSC2D04650TJ | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 24A Load current: 4A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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WNSC2D04650TJ | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers WNSC2D04650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD |
Produkt ist nicht verfügbar |
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| WNSC2D04650TJ | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN8x8N; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. forward impulse current: 24A Load current: 4A |
Produkt ist nicht verfügbar |