WNSC2D08650Q WeEn Semiconductors
Hersteller: WeEn SemiconductorsSchottky Diodes & Rectifiers WNSC2D08650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 5.8 EUR |
| 11+ | 4.84 EUR |
| 100+ | 3.85 EUR |
| 500+ | 3.28 EUR |
| 1000+ | 2.73 EUR |
| 2000+ | 2.6 EUR |
| 5000+ | 2.53 EUR |
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Technische Details WNSC2D08650Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 260pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote WNSC2D08650Q nach Preis ab 2.63 EUR bis 5.85 EUR
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WNSC2D08650Q | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARB 650V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 4990 Stücke: Lieferzeit 21-28 Tag (e) |
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