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WNSC2D10650BJ

WNSC2D10650BJ WeEn Semiconductors

WNSC2D10650B.pdf
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.18 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details WNSC2D10650BJ WeEn Semiconductors

Description: DIODE SIL CARBIDE 650V 10A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 310pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.

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WNSC2D10650BJ WNSC2D10650BJ WeEn Semiconductors WNSC2D10650B.pdf SiC Schottky Diodes WNSC2D10650B/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD
auf Bestellung 4704 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.09 EUR
10+3.28 EUR
100+2.26 EUR
500+1.83 EUR
800+1.69 EUR
2400+1.63 EUR
4800+1.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D10650BJ WNSC2D10650BJ WeEn Semiconductors WNSC2D10650B.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 8768 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.64 EUR
10+4.34 EUR
100+3.03 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D10650BJ WNSC2D10650B.pdf
WNSC2D10650BJ
Hersteller: WeEn Semiconductors
SiC Schottky Diodes WNSC2D10650B/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD
auf Bestellung 4704 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.09 EUR
10+3.28 EUR
100+2.26 EUR
500+1.83 EUR
800+1.69 EUR
2400+1.63 EUR
4800+1.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D10650BJ WNSC2D10650B.pdf
WNSC2D10650BJ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 8768 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.64 EUR
10+4.34 EUR
100+3.03 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH