WNSC2D10650BJ WeEn Semiconductors
Hersteller: WeEn SemiconductorsDescription: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 2.66 EUR |
| 1600+ | 2.26 EUR |
| 2400+ | 2.15 EUR |
| 5600+ | 2.07 EUR |
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Technische Details WNSC2D10650BJ WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 310pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote WNSC2D10650BJ nach Preis ab 3.04 EUR bis 6.99 EUR
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WNSC2D10650BJ | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 8783 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D10650BJ | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers WNSC2D10650B/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD |
auf Bestellung 4795 Stücke: Lieferzeit 14-28 Tag (e) |
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| WNSC2D10650BJ | Hersteller : Ween |
WNSC2D10650B/TO263/REEL 13\"" Q1/T1 *STANDARD MARK SMD |
Produkt ist nicht verfügbar |
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| WNSC2D10650BJ | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Technology: SiC Case: D2PAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 2.2V Max. load current: 20A Type of diode: Schottky rectifying Max. forward impulse current: 50A Load current: 10A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| WNSC2D10650BJ | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Technology: SiC Case: D2PAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 2.2V Max. load current: 20A Type of diode: Schottky rectifying Max. forward impulse current: 50A Load current: 10A |
Produkt ist nicht verfügbar |