WNSC2D10650WQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
SiC Schottky Diodes WNSC2D10650W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.49 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.59 EUR |
| 600+ | 2.2 EUR |
| 1200+ | 1.87 EUR |
| 3000+ | 1.78 EUR |
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Technische Details WNSC2D10650WQ WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 310pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote WNSC2D10650WQ nach Preis ab 3 EUR bis 6.7 EUR
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WNSC2D10650WQ | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 10A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 457 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.7 EUR |
| 30+ | 3.68 EUR |
| 120+ | 3 EUR |