WNSC2D201200W6Q WeEn Semiconductors
Hersteller: WeEn SemiconductorsDescription: DIODE SIL CARB 1.2KV 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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Technische Details WNSC2D201200W6Q WeEn Semiconductors
Description: DIODE SIL CARB 1.2KV 20A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 845pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
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| WNSC2D201200W6Q | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers WNSC2D201200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK |
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