WNSC2D20650CJQ WeEn Semiconductors
Hersteller: WeEn SemiconductorsDescription: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Tape & Reel (TR)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 480+ | 5.33 EUR |
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Technische Details WNSC2D20650CJQ WeEn Semiconductors
Description: DIODE ARR SIC SCHOT 650V TO3PF, Packaging: Tape & Reel (TR), Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: TO-3PF, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote WNSC2D20650CJQ nach Preis ab 6.73 EUR bis 12.95 EUR
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WNSC2D20650CJQ | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers WNSC2D20650CJ/TO3PF/STANDARD MARKING * HORIZONTAL, RAIL PACK |
auf Bestellung 2400 Stücke: Lieferzeit 14-28 Tag (e) |
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WNSC2D20650CJQ | Hersteller : WeEn Semiconductors |
Description: DIODE ARR SIC SCHOT 650V TO3PF Packaging: Cut Tape (CT) Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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WNSC2D20650CJQ | Hersteller : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: SOT1293; TO3PF Kind of package: tube Max. forward impulse current: 50A Max. forward voltage: 1.8V Anzahl je Verpackung: 2400 Stücke |
Produkt ist nicht verfügbar |
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WNSC2D20650CJQ | Hersteller : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: SOT1293; TO3PF Kind of package: tube Max. forward impulse current: 50A Max. forward voltage: 1.8V |
Produkt ist nicht verfügbar |