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WNSC2D401200CWQ

WNSC2D401200CWQ WeEn Semiconductors

WNSC2D401200CW.pdf
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC 1200V 40A TO247-3
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
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Technische Details WNSC2D401200CWQ WeEn Semiconductors

Description: DIODE ARR SIC 1200V 40A TO247-3, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io) (per Diode): 40A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tape & Reel (TR).