WNSC6D10650Q WeEn Semiconductors
Hersteller: WeEn Semiconductors
SiC Schottky Diodes WNSC6D10650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK
| Anzahl | Preis |
|---|---|
| 1+ | 5.23 EUR |
| 10+ | 3.03 EUR |
| 100+ | 2.62 EUR |
| 500+ | 2.2 EUR |
| 1000+ | 1.95 EUR |
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Technische Details WNSC6D10650Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 500pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote WNSC6D10650Q nach Preis ab 2.3 EUR bis 6.49 EUR
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WNSC6D10650Q | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARB 650V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 500pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
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