WNSC6D10650Q WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.21 EUR |
10+ | 4.38 EUR |
100+ | 3.55 EUR |
500+ | 3.15 EUR |
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Technische Details WNSC6D10650Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 500pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote WNSC6D10650Q nach Preis ab 4.06 EUR bis 7.88 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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WNSC6D10650Q | Hersteller : WeEn Semiconductors | Schottky Diodes & Rectifiers WNSC6D10650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK |
auf Bestellung 2639 Stücke: Lieferzeit 14-28 Tag (e) |
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WNSC6D10650Q | Hersteller : WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - WNSC6D10650Q - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 24 nC, TO-220 tariffCode: 85411000 productTraceability: No Kapazitive Gesamtladung: 24nC rohsCompliant: YES Durchschnittlicher Durchlassstrom: 10A euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Wiederkehrende Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
auf Bestellung 848 Stücke: Lieferzeit 14-21 Tag (e) |
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WNSC6D10650Q | Hersteller : Ween | WNSC6D10650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK |
Produkt ist nicht verfügbar |
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WNSC6D10650Q | Hersteller : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 75A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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WNSC6D10650Q | Hersteller : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 75A |
Produkt ist nicht verfügbar |