WNSC6D20650B6J WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 800+ | 3.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WNSC6D20650B6J WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 20A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 780pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.
Weitere Produktangebote WNSC6D20650B6J nach Preis ab 1.6 EUR bis 8.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSC6D20650B6J | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 20A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
auf Bestellung 4518 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| WNSC6D20650B6J | Hersteller : WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 120A Kind of package: reel; tape |
auf Bestellung 784 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
| WNSC6D20650B6J | Hersteller : WeEn Semiconductors |
SiC Schottky Diodes WNSC6D20650B/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD |
Produkt ist nicht verfügbar |