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WNSC6D20650B6J

WNSC6D20650B6J WeEn Semiconductors


WNSC6D20650B.pdf
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.82 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details WNSC6D20650B6J WeEn Semiconductors

Description: DIODE SIL CARBIDE 650V 20A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 780pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.

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WNSC6D20650B6J WNSC6D20650B6J Hersteller : WeEn Semiconductors WNSC6D20650B.pdf Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 4518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.31 EUR
10+5.81 EUR
100+4.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D20650B6J Hersteller : WeEn Semiconductors WNSC6D20650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 120A
Kind of package: reel; tape
auf Bestellung 784 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
31+2.35 EUR
100+1.99 EUR
500+1.6 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
WNSC6D20650B6J Hersteller : WeEn Semiconductors WNSC6D20650B-2940798.pdf SiC Schottky Diodes WNSC6D20650B/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD
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