Technische Details WNSCM80120WQ Ween
Description: WNSCM80120W/TO-247/STANDARD MARK, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V, Power Dissipation (Max): 230W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 6mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V.
Weitere Produktangebote WNSCM80120WQ
Foto | Bezeichnung | Hersteller | Beschreibung |
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WNSCM80120WQ | Hersteller : WeEn Semiconductors |
Description: WNSCM80120W/TO-247/STANDARD MARK Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Power Dissipation (Max): 230W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 6mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V |
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WNSCM80120WQ | Hersteller : WeEn Semiconductors | MOSFET WNSCM80120W/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK |
Produkt ist nicht verfügbar |