WPB4002-1E onsemi
Hersteller: onsemi
Description: MOSFET N-CH 600V 23A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Supplier Device Package: TO-3P-3L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
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Technische Details WPB4002-1E onsemi
Description: MOSFET N-CH 600V 23A TO3P-3L, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 220W (Tc), Supplier Device Package: TO-3P-3L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V.
Weitere Produktangebote WPB4002-1E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| WPB4002-1E | onsemi |
Description: MOSFET N-CH 600V 23A TO3P-3L Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3P-3L Power Dissipation (Max): 2.5W (Ta), 220W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WPB4002-1E |
Hersteller: onsemi
Description: MOSFET N-CH 600V 23A TO3P-3L
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P-3L
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 600V 23A TO3P-3L
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P-3L
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH