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XK1R9F10QB,LXGQ

XK1R9F10QB,LXGQ Toshiba Semiconductor and Storage

docget.jsp?did=68673&prodName=XK1R9F10QB Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.92mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.93 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details XK1R9F10QB,LXGQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 160A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), Rds On (Max) @ Id, Vgs: 1.92mOhm @ 80A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-220SM(W), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 10 V.

Weitere Produktangebote XK1R9F10QB,LXGQ nach Preis ab 3.04 EUR bis 7.85 EUR

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XK1R9F10QB,LXGQ XK1R9F10QB,LXGQ Hersteller : Toshiba XK1R9F10QB_datasheet_en_20230522-1840204.pdf MOSFETs 375W 1MHz Automotive; AEC-Q101
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.16 EUR
10+4.86 EUR
100+3.52 EUR
500+3.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
XK1R9F10QB,LXGQ XK1R9F10QB,LXGQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=68673&prodName=XK1R9F10QB Description: MOSFET N-CH 100V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.92mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 10 V
auf Bestellung 4344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.85 EUR
10+5.21 EUR
100+3.70 EUR
500+3.06 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
XK1R9F10QB,LXGQ XK1R9F10QB,LXGQ Hersteller : Toshiba docget.pdf Trans MOSFET N-CH Si 100V 160A Automotive AEC-Q101 3-Pin(2+Tab) TO-220SM(W) T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH