auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 12.72 EUR |
| 10+ | 10.89 EUR |
| 25+ | 9.89 EUR |
| 100+ | 9.06 EUR |
| 250+ | 8.54 EUR |
| 500+ | 8.01 EUR |
| 1000+ | 7.2 EUR |
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Technische Details XP10N3R8IT YAGEO XSemi
Description: FET N-CH 100V 67.7A TO220CFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67.7A (Ta), Rds On (Max) @ Id, Vgs: 3.88mOhm @ 35A, 10V, Power Dissipation (Max): 1.92W (Ta), 32.8W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220CFM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 80 V.
Weitere Produktangebote XP10N3R8IT nach Preis ab 7.26 EUR bis 12.81 EUR
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XP10N3R8IT | Hersteller : YAGEO XSEMI |
 Description: FET N-CH 100V 67.7A TO220CFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67.7A (Ta) Rds On (Max) @ Id, Vgs: 3.88mOhm @ 35A, 10V Power Dissipation (Max): 1.92W (Ta), 32.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220CFM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 80 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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