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XP10TN135K

XP10TN135K YAGEO XSEMI

XP10TN135K.pdf Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V
Power Dissipation (Max): 2.78W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.87 EUR
12+ 1.52 EUR
100+ 1.19 EUR
500+ 1 EUR
Mindestbestellmenge: 10
Produktrezensionen
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Technische Details XP10TN135K YAGEO XSEMI

Description: MOSFET N-CH 100V 3A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V, Power Dissipation (Max): 2.78W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V.

Weitere Produktangebote XP10TN135K nach Preis ab 0.73 EUR bis 1.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
XP10TN135K XP10TN135K Hersteller : XSemi XP10TN135K-3132666.pdf MOSFET N-CH 100V 3A SOT-223
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.88 EUR
10+ 1.53 EUR
100+ 1.2 EUR
500+ 1.01 EUR
1000+ 0.86 EUR
3000+ 0.73 EUR
Mindestbestellmenge: 2
XP10TN135K XP10TN135K Hersteller : YAGEO XSemi XP10TN135K-3367916.pdf MOSFET N-CH 100V 3A SOT-223
auf Bestellung 2937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.88 EUR
10+ 1.53 EUR
100+ 1.2 EUR
500+ 1.01 EUR
1000+ 0.86 EUR
3000+ 0.73 EUR
Mindestbestellmenge: 2
XP10TN135K XP10TN135K Hersteller : YAGEO XSEMI XP10TN135K.pdf Description: MOSFET N-CH 100V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V
Power Dissipation (Max): 2.78W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
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