| Anzahl | Preis |
|---|---|
| 3+ | 1 EUR |
| 10+ | 0.7 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.28 EUR |
| 9000+ | 0.24 EUR |
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Technische Details XP10TN135N YAGEO XSemi
Description: MOSFET N-CH 100V 2.1A 3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc), Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 10V, Power Dissipation (Max): 1.38W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V.
Weitere Produktangebote XP10TN135N nach Preis ab 0.38 EUR bis 1.14 EUR
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XP10TN135N | YAGEO XSEMI |
 Description: MOSFET N-CH 100V 2.1A 3A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V |
auf Bestellung 562 Stücke: Lieferzeit 10-14 Tag (e) |
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| XP10TN135N |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 2.1A 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Description: MOSFET N-CH 100V 2.1A 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 562 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.14 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |