
XP161A11A1PR-G Torex Semiconductor
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 1.20 EUR |
10+ | 0.93 EUR |
100+ | 0.70 EUR |
500+ | 0.63 EUR |
1000+ | 0.46 EUR |
2000+ | 0.40 EUR |
5000+ | 0.38 EUR |
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Technische Details XP161A11A1PR-G Torex Semiconductor
Description: MOSFET N-CH 30V 4A SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 10V, Power Dissipation (Max): 2W (Ta), Supplier Device Package: SOT-89, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V.
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XP161A11A1PR-G | Hersteller : Torex Semiconductor Ltd |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 10V Power Dissipation (Max): 2W (Ta) Supplier Device Package: SOT-89 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
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