XP161A11A1PR-G Torex Semiconductor
auf Bestellung 1742 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.2 EUR |
| 10+ | 0.93 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.46 EUR |
| 2000+ | 0.4 EUR |
| 5000+ | 0.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details XP161A11A1PR-G Torex Semiconductor
Description: MOSFET N-CH 30V 4A SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 10V, Power Dissipation (Max): 2W (Ta), Supplier Device Package: SOT-89, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V.
Weitere Produktangebote XP161A11A1PR-G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| XP161A11A1PR-G | Hersteller : TOREX |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 2W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 16A Power dissipation: 2W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
XP161A11A1PR-G | Hersteller : Torex Semiconductor Ltd |
Description: MOSFET N-CH 30V 4A SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 10V Power Dissipation (Max): 2W (Ta) Supplier Device Package: SOT-89 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
Produkt ist nicht verfügbar |
|
| XP161A11A1PR-G | Hersteller : TOREX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 2W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 16A Power dissipation: 2W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |