| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.38 EUR |
| 3000+ | 0.35 EUR |
| 9000+ | 0.3 EUR |
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Technische Details XP2322GN YAGEO XSemi
Description: MOSFET N-CH 20V 2.5A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 1.6A, 4.5V, Power Dissipation (Max): 833mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 20 V.
Weitere Produktangebote XP2322GN nach Preis ab 0.37 EUR bis 0.97 EUR
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XP2322GN | YAGEO XSEMI |
 Description: MOSFET N-CH 20V 2.5A SOT23Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 833mW (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 1.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| XP2322GN |
|
Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 20V 2.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 833mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 2.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 833mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 22+ | 0.84 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.37 EUR |