XP234N0801TR-G Torex Semiconductor
auf Bestellung 7708 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 0.39 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.097 EUR |
| 6000+ | 0.083 EUR |
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Technische Details XP234N0801TR-G Torex Semiconductor
Description: MOSFET N-CH 30V 800MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 290mOhm @ 400mA, 10V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 10 V.
Weitere Produktangebote XP234N0801TR-G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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XP234N0801TR-G | Hersteller : Torex Semiconductor Ltd |
Description: MOSFET N-CH 30V 800MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 290mOhm @ 400mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 10 V |
Produkt ist nicht verfügbar |
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XP234N0801TR-G | Hersteller : TOREX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 0.8A; Idm: 1.6A; 0.4W; SOT23-3 Case: SOT23-3 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 0.4Ω Power dissipation: 0.4W Drain current: 0.8A Pulsed drain current: 1.6A Gate-source voltage: ±20V Drain-source voltage: 30V |
Produkt ist nicht verfügbar |


