| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.21 EUR |
| 9000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details XP2530AGY YAGEO XSemi
Description: MOSFET N/P-CH 30V 3.3A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.136W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 2.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V, 260pF @ 15V, Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-26.
Weitere Produktangebote XP2530AGY nach Preis ab 0.26 EUR bis 0.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
XP2530AGY | YAGEO XSEMI |
 Description: MOSFET N/P-CH 30V 3.3A SOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.136W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 2.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V, 260pF @ 15V Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-26 |
auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
|
| XP2530AGY |
|
Hersteller: YAGEO XSEMI
Description: MOSFET N/P-CH 30V 3.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.136W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V, 260pF @ 15V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Description: MOSFET N/P-CH 30V 3.3A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.136W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V, 260pF @ 15V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 36+ | 0.49 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.26 EUR |