| Anzahl | Preis |
|---|---|
| 4+ | 0.8 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.17 EUR |
| 6000+ | 0.15 EUR |
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Technische Details XP3P020M YAGEO XSemi
Description: MOSFET P-CH 30V 9.3A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote XP3P020M nach Preis ab 0.62 EUR bis 1 EUR
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XP3P020M | YAGEO XSEMI |
 Description: MOSFET P-CH 30V 9.3A 8SORds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
|
| XP3P020M |
|
Hersteller: YAGEO XSEMI
Description: MOSFET P-CH 30V 9.3A 8SO
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Description: MOSFET P-CH 30V 9.3A 8SO
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 29+ | 0.62 EUR |