| Anzahl | Privatkunde |
|---|---|
| 2+ | 2 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.58 EUR |
| 3000+ | 0.5 EUR |
| 6000+ | 0.48 EUR |
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Technische Details XP3P7R0EM YAGEO XSemi
Description: MOSFET P-CH 30V 15.5A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote XP3P7R0EM nach Preis ab 0.89 EUR bis 2.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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XP3P7R0EM | YAGEO XSEMI |
 Description: MOSFET P-CH 30V 15.5A 8SOTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta) FET Type: P-Channel |
auf Bestellung 268 Stücke: Lieferzeit 10-14 Tag (e) |
|
| XP3P7R0EM |
|
Hersteller: YAGEO XSEMI
Description: MOSFET P-CH 30V 15.5A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
FET Type: P-Channel
Description: MOSFET P-CH 30V 15.5A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
FET Type: P-Channel
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.18 EUR |
| 16+ | 1.36 EUR |
| 100+ | 0.89 EUR |