auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.48 EUR |
| 10+ | 2.9 EUR |
| 100+ | 2.31 EUR |
| 250+ | 2.13 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.65 EUR |
| 3000+ | 1.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details XP3R303GMT-L YAGEO XSemi
Description: MOSFET N-CH 30V 31A 105A PMPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V, Power Dissipation (Max): 5W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PMPAK® 5 x 6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V.
Weitere Produktangebote XP3R303GMT-L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
XP3R303GMT-L | Hersteller : YAGEO XSEMI |
 Description: MOSFET N-CH 30V 31A 105A PMPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
XP3R303GMT-L | Hersteller : YAGEO XSEMI |
Description: MOSFET N-CH 30V 31A 105A PMPAK Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V |
Produkt ist nicht verfügbar |