| Anzahl | Preis |
|---|---|
| 1+ | 3.52 EUR |
| 10+ | 2.46 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.36 EUR |
| 3000+ | 1.21 EUR |
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Technische Details XP4509AGM YAGEO XSemi
Description: MOSFET N/P-CH 30V 11.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, 2000pF @ 25V, Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote XP4509AGM nach Preis ab 1.46 EUR bis 3.61 EUR
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XP4509AGM | YAGEO XSEMI |
 Description: MOSFET N/P-CH 30V 11.2A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, 2000pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 910 Stücke: Lieferzeit 10-14 Tag (e) |
|
| XP4509AGM |
|
Hersteller: YAGEO XSEMI
Description: MOSFET N/P-CH 30V 11.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, 2000pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V 11.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, 2000pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 910 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.61 EUR |
| 10+ | 2.53 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.46 EUR |