auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.38 EUR |
| 10+ | 2.8 EUR |
| 100+ | 2.22 EUR |
| 250+ | 2.06 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.6 EUR |
| 2000+ | 1.52 EUR |
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Technische Details XP50AN1K5I YAGEO XSemi
Description: MOSFET N-CH 500V 5A TO220CFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V, Power Dissipation (Max): 1.92W (Ta), 31.3W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220CFM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V.
Weitere Produktangebote XP50AN1K5I nach Preis ab 1.62 EUR bis 3.41 EUR
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XP50AN1K5I | Hersteller : YAGEO XSEMI |
 Description: MOSFET N-CH 500V 5A TO220CFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V Power Dissipation (Max): 1.92W (Ta), 31.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220CFM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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