| Anzahl | Preis |
|---|---|
| 1+ | 5.1 EUR |
| 10+ | 2.57 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.87 EUR |
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Technische Details XP65SL190DI YAGEO XSemi
Description: MOSFET N-CH 650V 20A TO220CFM, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3312 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 92.8 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220CFM, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc).
Weitere Produktangebote XP65SL190DI nach Preis ab 2.39 EUR bis 6.32 EUR
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XP65SL190DI | YAGEO XSEMI |
 Description: MOSFET N-CH 650V 20A TO220CFMFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3312 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 92.8 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220CFM Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
auf Bestellung 983 Stücke: Lieferzeit 10-14 Tag (e) |
|
| XP65SL190DI |
|
Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 650V 20A TO220CFM
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3312 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 92.8 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220CFM
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Description: MOSFET N-CH 650V 20A TO220CFM
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3312 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 92.8 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220CFM
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
auf Bestellung 983 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.32 EUR |
| 50+ | 3.22 EUR |
| 100+ | 2.92 EUR |
| 500+ | 2.39 EUR |