| Anzahl | Preis |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.54 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.45 EUR |
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Technische Details XP70SL1K4AH YAGEO XSemi
Description: MOSFET N-CH 700V 3.2A TO252, Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2W (Ta), 28.4W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote XP70SL1K4AH nach Preis ab 1.61 EUR bis 3.56 EUR
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XP70SL1K4AH | YAGEO XSEMI |
 Description: MOSFET N-CH 700V 3.2A TO252Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2W (Ta), 28.4W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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XP70SL1K4AH | XSemi |
MOSFET N-CH 700V 3.2 A TO-252 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| XP70SL1K4AH |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 700V 3.2A TO252
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2W (Ta), 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 700V 3.2A TO252
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2W (Ta), 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.54 EUR |
| 10+ | 2.93 EUR |
| 100+ | 2.33 EUR |
| 500+ | 1.97 EUR |
| XP70SL1K4AH |
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Hersteller: XSemi
MOSFET N-CH 700V 3.2 A TO-252
MOSFET N-CH 700V 3.2 A TO-252
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.56 EUR |
| 10+ | 2.96 EUR |
| 100+ | 2.36 EUR |
| 250+ | 2.18 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.69 EUR |
| 3000+ | 1.61 EUR |