| Anzahl | Preis |
|---|---|
| 2+ | 1.66 EUR |
| 10+ | 0.86 EUR |
| 80+ | 0.77 EUR |
| 560+ | 0.65 EUR |
| 2560+ | 0.59 EUR |
| 5040+ | 0.55 EUR |
| 10000+ | 0.53 EUR |
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Technische Details XP83T03GJB YAGEO XSemi
Description: MOSFET N-CH 30V 75A TO251S, Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-251S, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote XP83T03GJB nach Preis ab 0.69 EUR bis 2.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| XP83T03GJB | YAGEO XSEMI |
 Description: MOSFET N-CH 30V 75A TO251SInput Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-251S Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
|
| XP83T03GJB |
|
Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 30V 75A TO251S
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251S
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 30V 75A TO251S
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251S
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.15 EUR |
| 80+ | 0.93 EUR |
| 160+ | 0.83 EUR |
| 560+ | 0.69 EUR |