| Anzahl | Preis |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.36 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.73 EUR |
| 3000+ | 0.58 EUR |
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Technische Details XP9561GH YAGEO XSemi
Description: MOSFET P-CH 40V 45A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V, Power Dissipation (Max): 54.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V.
Weitere Produktangebote XP9561GH nach Preis ab 1.4 EUR bis 2.59 EUR
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XP9561GH | YAGEO XSEMI |
 Description: MOSFET P-CH 40V 45A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 54.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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| XP9561GH |
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Hersteller: YAGEO XSEMI
Description: MOSFET P-CH 40V 45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Description: MOSFET P-CH 40V 45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.4 EUR |