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XPH1R104PS,L1XHQ

XPH1R104PS,L1XHQ Toshiba

XPH1R104PS_datasheet_en_20210930-3478249.pdf Hersteller: Toshiba
MOSFETs 40V UMOS9-H SOP Advance(WF) 1.1mohm
auf Bestellung 4988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.33 EUR
10+2.13 EUR
25+1.81 EUR
100+1.46 EUR
250+1.33 EUR
500+1.16 EUR
1000+1.07 EUR
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Technische Details XPH1R104PS,L1XHQ Toshiba

Description: 40V UMOS9-H SOP ADVANCE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V, Power Dissipation (Max): 3W (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote XPH1R104PS,L1XHQ nach Preis ab 0.96 EUR bis 3.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
XPH1R104PS,L1XHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=139827&prodName=XPH1R104PS Description: 40V UMOS9-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.96 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
XPH1R104PS,L1XHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=139827&prodName=XPH1R104PS Description: 40V UMOS9-H SOP ADVANCE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
10+2.35 EUR
25+1.98 EUR
100+1.56 EUR
250+1.36 EUR
500+1.23 EUR
1000+1.13 EUR
2500+1.01 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH