| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.47 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.26 EUR |
| 5000+ | 1.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details XPH1R104PS,L1XHQ Toshiba
Description: 40V UMOS9-H SOP ADVANCE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Grade: Automotive, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 3V @ 500µA, Power Dissipation (Max): 3W (Ta), 132W (Tc), Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote XPH1R104PS,L1XHQ nach Preis ab 1.26 EUR bis 3.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
XPH1R104PS,L1XHQ | Toshiba Semiconductor and Storage |
 Description: 40V UMOS9-H SOP ADVANCEQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Grade: Automotive Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 3V @ 500µA Power Dissipation (Max): 3W (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 4750 Stücke: Lieferzeit 10-14 Tag (e) |
|
| XPH1R104PS,L1XHQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: 40V UMOS9-H SOP ADVANCE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: 40V UMOS9-H SOP ADVANCE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.53 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.26 EUR |