Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > XPH2R106NC,L1XHQ
XPH2R106NC,L1XHQ

XPH2R106NC,L1XHQ Toshiba Semiconductor and Storage

XPN12006NC_catalog_20160325_ALQ00006.pdf?did=36157&prodName=XPN12006NC
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 110A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.71 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details XPH2R106NC,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 110A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Ta), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote XPH2R106NC,L1XHQ nach Preis ab 1.78 EUR bis 5.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
XPH2R106NC,L1XHQ XPH2R106NC,L1XHQ Toshiba Semiconductor and Storage XPN12006NC_catalog_20160325_ALQ00006.pdf?did=36157&prodName=XPN12006NC Description: MOSFET N-CH 60V 110A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8694 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.94 EUR
10+3.28 EUR
100+2.62 EUR
500+2.21 EUR
1000+1.88 EUR
2000+1.78 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XPH2R106NC,L1XHQ XPH2R106NC,L1XHQ Toshiba AFE757D13A0FA6A1D5F69001847C4C56293844BE49D265A7944F403BD30C55EA.pdf MOSFETs
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.71 EUR
10+3.71 EUR
100+2.56 EUR
500+2.09 EUR
1000+1.98 EUR
2500+1.87 EUR
5000+1.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
XPH2R106NC,L1XHQ XPN12006NC_catalog_20160325_ALQ00006.pdf?did=36157&prodName=XPN12006NC
XPH2R106NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 110A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8694 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.94 EUR
10+3.28 EUR
100+2.62 EUR
500+2.21 EUR
1000+1.88 EUR
2000+1.78 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XPH2R106NC,L1XHQ AFE757D13A0FA6A1D5F69001847C4C56293844BE49D265A7944F403BD30C55EA.pdf
XPH2R106NC,L1XHQ
Hersteller: Toshiba
MOSFETs
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.71 EUR
10+3.71 EUR
100+2.56 EUR
500+2.09 EUR
1000+1.98 EUR
2500+1.87 EUR
5000+1.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH