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XPH2R106NC,L1XHQ

XPH2R106NC,L1XHQ Toshiba Semiconductor and Storage

XPN12006NC_catalog_20160325_ALQ00006.pdf?did=36157&prodName=XPN12006NC Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 110A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+2.17 EUR
Mindestbestellmenge: 5000
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Technische Details XPH2R106NC,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 110A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Ta), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote XPH2R106NC,L1XHQ nach Preis ab 2.23 EUR bis 5.04 EUR

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XPH2R106NC,L1XHQ XPH2R106NC,L1XHQ Hersteller : Toshiba Semiconductor and Storage XPN12006NC_catalog_20160325_ALQ00006.pdf?did=36157&prodName=XPN12006NC Description: MOSFET N-CH 60V 110A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 55A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8775 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.02 EUR
10+ 4.16 EUR
100+ 3.31 EUR
500+ 2.8 EUR
1000+ 2.38 EUR
2000+ 2.26 EUR
Mindestbestellmenge: 6
XPH2R106NC,L1XHQ XPH2R106NC,L1XHQ Hersteller : Toshiba XPH2R106NC_datasheet_en_20201021-1948113.pdf MOSFET
auf Bestellung 5441 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+5.04 EUR
13+ 4.21 EUR
100+ 3.33 EUR
250+ 3.2 EUR
500+ 2.83 EUR
1000+ 2.28 EUR
5000+ 2.23 EUR
Mindestbestellmenge: 11