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XPH3R114MC,L1XHQ

XPH3R114MC,L1XHQ Toshiba Semiconductor and Storage

XPH3R114MC_datasheet_en_20211202.pdf?did=63639&prodName=XPH3R114MC Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+2.23 EUR
Mindestbestellmenge: 5000
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Technische Details XPH3R114MC,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET P-CH 40V 100A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V.

Weitere Produktangebote XPH3R114MC,L1XHQ nach Preis ab 2.32 EUR bis 5.17 EUR

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XPH3R114MC,L1XHQ XPH3R114MC,L1XHQ Hersteller : Toshiba Semiconductor and Storage XPH3R114MC_datasheet_en_20211202.pdf?did=63639&prodName=XPH3R114MC Description: MOSFET P-CH 40V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
auf Bestellung 8792 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.17 EUR
10+ 4.28 EUR
100+ 3.4 EUR
500+ 2.88 EUR
1000+ 2.44 EUR
2000+ 2.32 EUR
Mindestbestellmenge: 6
XPH3R114MC,L1XHQ XPH3R114MC,L1XHQ Hersteller : Toshiba XPH3R114MC_datasheet_en_20211202-1840189.pdf MOSFET 170W 1MHz Automotive; AEC-Q101
auf Bestellung 6877 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+5.17 EUR
13+ 4.32 EUR
100+ 3.41 EUR
250+ 3.15 EUR
500+ 2.86 EUR
1000+ 2.44 EUR
2500+ 2.34 EUR
Mindestbestellmenge: 11