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XPH3R206NC,L1XHQ

XPH3R206NC,L1XHQ Toshiba Semiconductor and Storage

Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.19 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details XPH3R206NC,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 70A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Ta), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote XPH3R206NC,L1XHQ nach Preis ab 1.22 EUR bis 3.24 EUR

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XPH3R206NC,L1XHQ XPH3R206NC,L1XHQ Hersteller : Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
10+2.29 EUR
100+1.62 EUR
500+1.38 EUR
1000+1.25 EUR
2000+1.22 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
XPH3R206NC,L1XHQ XPH3R206NC,L1XHQ Hersteller : Toshiba XPH3R206NC_datasheet_en_20201021-1948105.pdf MOSFETs
auf Bestellung 8716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.24 EUR
10+2.32 EUR
100+1.62 EUR
500+1.44 EUR
1000+1.34 EUR
2500+1.27 EUR
5000+1.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH