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XPH4R10ANB,L1XHQ

XPH4R10ANB,L1XHQ Toshiba Semiconductor and Storage

docget.jsp?did=68580&prodName=XPH4R10ANB Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.04 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details XPH4R10ANB,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 70A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Ta), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V, Power Dissipation (Max): 960mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V, Qualification: AEC-Q101.

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XPH4R10ANB,L1XHQ XPH4R10ANB,L1XHQ Hersteller : Toshiba 85D2D06A4B5717670C4229F36C69EC51F7792D9721A017A862530F0F7F286F91.pdf MOSFETs PD=170W F=1MHZ AEC-Q101
auf Bestellung 7826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.41 EUR
10+1.21 EUR
100+1.14 EUR
500+1.13 EUR
1000+1.1 EUR
2500+1.07 EUR
5000+1.01 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
XPH4R10ANB,L1XHQ XPH4R10ANB,L1XHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=68580&prodName=XPH4R10ANB Description: MOSFET N-CH 100V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 33993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
12+1.58 EUR
100+1.29 EUR
500+1.26 EUR
1000+1.14 EUR
2000+1.08 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH