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XPH4R714MC,L1XHQ

XPH4R714MC,L1XHQ Toshiba Semiconductor and Storage

docget.jsp?did=66018&prodName=XPH4R714MC Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.78 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details XPH4R714MC,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET P-CH 40V 60A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote XPH4R714MC,L1XHQ nach Preis ab 0.81 EUR bis 2.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
XPH4R714MC,L1XHQ XPH4R714MC,L1XHQ Hersteller : Toshiba XPH4R714MC_datasheet_en_20241216-1915249.pdf MOSFETs 132W 1MHz Automotive; AEC-Q101
auf Bestellung 9529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.64 EUR
10+1.25 EUR
100+1.07 EUR
500+1.03 EUR
5000+0.87 EUR
25000+0.81 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
XPH4R714MC,L1XHQ XPH4R714MC,L1XHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=66018&prodName=XPH4R714MC Description: MOSFET P-CH 40V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 36132 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
11+1.69 EUR
100+1.26 EUR
500+1.03 EUR
1000+0.9 EUR
2000+0.83 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
XPH4R714MC,L1XHQ XPH4R714MC,L1XHQ Hersteller : Toshiba xph4r714mc_datasheet_en_20211202.pdf Trans MOSFET P-CH Si 40V 60A Automotive 8-Pin SOP Advance(WF) T/R
Produkt ist nicht verfügbar
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