auf Bestellung 14738 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.24 EUR |
| 10+ | 1.62 EUR |
| 25+ | 1.61 EUR |
| 100+ | 1.27 EUR |
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Technische Details XPH6R30ANB,L1XHQ Toshiba
Description: MOSFET N-CH 100V 45A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V.
Weitere Produktangebote XPH6R30ANB,L1XHQ nach Preis ab 1.27 EUR bis 4.19 EUR
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XPH6R30ANB,L1XHQ | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 100V 45A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V |
auf Bestellung 8924 Stücke: Lieferzeit 10-14 Tag (e) |
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XPH6R30ANB,L1XHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 45A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V |
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