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XPH6R30ANB,L1XHQ

XPH6R30ANB,L1XHQ Toshiba

FF5710A4FDA82E0D19221DD785E88BC0434A95B37874F28AD6D55BDBAE78AC69.pdf
Hersteller: Toshiba
MOSFETs PD=132W F=1MHZ AEC-Q101
auf Bestellung 11962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.19 EUR
10+2.04 EUR
100+1.37 EUR
500+1.09 EUR
1000+0.95 EUR
2500+0.93 EUR
5000+0.89 EUR
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Technische Details XPH6R30ANB,L1XHQ Toshiba

Description: MOSFET N-CH 100V 45A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-SOP Advance (5x5), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote XPH6R30ANB,L1XHQ nach Preis ab 1.27 EUR bis 4.19 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
XPH6R30ANB,L1XHQ XPH6R30ANB,L1XHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=68578&prodName=XPH6R30ANB Description: MOSFET N-CH 100V 45A 8SOP
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
auf Bestellung 8924 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
10+2.7 EUR
100+1.85 EUR
500+1.48 EUR
1000+1.37 EUR
2000+1.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
XPH6R30ANB,L1XHQ XPH6R30ANB,L1XHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=68578&prodName=XPH6R30ANB Description: MOSFET N-CH 100V 45A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH