XPJ1R004PB,LXHQ

XPJ1R004PB,LXHQ Toshiba Semiconductor and Storage


docget.jsp?did=153161&prodName=XPJ1R004PB Hersteller: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGL
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.57 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details XPJ1R004PB,LXHQ Toshiba Semiconductor and Storage

Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGL, Packaging: Tape & Reel (TR), Package / Case: 5-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: S-TOGL™, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote XPJ1R004PB,LXHQ nach Preis ab 1.78 EUR bis 5.14 EUR

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XPJ1R004PB,LXHQ XPJ1R004PB,LXHQ Hersteller : Toshiba XPJ1R004PB_datasheet_en_20230630-3304118.pdf MOSFETs 40V UMOS9 1mohm S-TOGL
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.52 EUR
10+3.19 EUR
25+2.78 EUR
50+2.75 EUR
100+2.22 EUR
250+1.95 EUR
500+1.80 EUR
Im Einkaufswagen  Stück im Wert von  UAH
XPJ1R004PB,LXHQ XPJ1R004PB,LXHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=153161&prodName=XPJ1R004PB Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGL
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.27 EUR
25+2.78 EUR
100+2.22 EUR
250+1.95 EUR
500+1.78 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH