XPN12006NC,L1XHQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 60V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.72 EUR |
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Technische Details XPN12006NC,L1XHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 20A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: 8-TSON Advance-WF (3.1x3.1), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote XPN12006NC,L1XHQ nach Preis ab 0.77 EUR bis 2.80 EUR
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XPN12006NC,L1XHQ | Hersteller : Toshiba |
MOSFETs TSON N CHAN 60V |
auf Bestellung 57309 Stücke: Lieferzeit 10-14 Tag (e) |
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XPN12006NC,L1XHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 20A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 9372 Stücke: Lieferzeit 10-14 Tag (e) |
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